• DocumentCode
    2983117
  • Title

    High Speed InGaAs/InP Composite Collector Bipolar Transistors

  • Author

    Feygenson, A. ; Harnm, R.A. ; Ritter, D. ; Smith, P.R. ; Montgomery, R.K. ; Yadvish, R.D. ; Ternkin, H.

  • Author_Institution
    AT&T Bell Laboratories
  • fYear
    1992
  • fDate
    21-24 June 1992
  • Keywords
    Bandwidth; Bipolar transistors; Breakdown voltage; Current density; Impact ionization; Indium gallium arsenide; Indium phosphide; Microwave transistors; Physics; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1992. Digest. 50th Annual
  • Conference_Location
    Cambridge, MA, USA
  • Type

    conf

  • DOI
    10.1109/DRC.1992.671885
  • Filename
    671885
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2983117