Surface Passivation of AlGaN/GaN HEMTs

Author

Rajan, Siddharth ; Pei, Yi ; Cheng, Zhen ; DenBaars, Steven P. ; Mishra, Umesh K.

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA

fYear

2008

fDate

23-25 June 2008

Firstpage

131

Lastpage

132

Abstract

We developed a model to explain the mechanism of surface state dispersion and passivation for AlGaN/GaN HEMTs and verified it by investigating large signal operation as a function of SiN_x thicknesses at different drain biases. The low dielectric constant helps to reduce the parasitic capacitance, and therefore increase gain. We showed that the use of a SiN_x/SiO₂ stack could provide lower parasitic capacitance and help remove DC-RF dispersion. Such designs will be critical to achieving excellent power performance for scaled AlGaN/GaN HEMTs.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; passivation; permittivity; silicon compounds; wide band gap semiconductors; AlGaN-GaN; DC-RF dispersion; SiN_x-SiO₂; dielectric constant; high-electron mobility transistor; parasitic capacitance; surface passivation; surface state dispersion; Aluminum gallium nitride; Dielectric constant; Dielectric materials; Electric breakdown; Gallium nitride; HEMTs; MODFETs; Parasitic capacitance; Passivation; Predictive models;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2008

Conference_Location

Santa Barbara, CA

ISSN

1548-3770

Print_ISBN

978-1-4244-1942-5

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2008.4800769

Filename

4800769