• DocumentCode
    2983223
  • Title

    Analytical Study of DC Characteristics of p-Si/Ã\x9f-FeSi2/n-Si Double-Heterostructure Light-Emitting Diode

  • Author

    Huang, J.S. ; Lee, K.W. ; Wang, C.B. ; Huang, Y.S. ; Shiu, S.F. ; Liu, Y.J.

  • Author_Institution
    I-Shou Univ., Kaohsiung
  • fYear
    2007
  • fDate
    20-22 Dec. 2007
  • Firstpage
    701
  • Lastpage
    704
  • Abstract
    The analytical method is developed to calculate the equilibrium and forward-bias conditions of p-Si/beta-FeSi2/n-Si DH LED. The Poisson´s equation is solved to investigate the equilibrium electric field and free carriers distributions. Diffusion and thermionic emission mechanisms are used to calculate I-V characteristics and ideal internal quantum efficiency.
  • Keywords
    Poisson equation; elemental semiconductors; light emitting diodes; silicon; thermionic emission; DH LED DC characteristics; I-V characteristics calculation; Poisson equation; Si-FeSi2-Si; diffusion mechanism; double-heterostructure light-emitting diode; forward-bias condition; internal quantum efficiency; thermionic emission mechanism; Charge carrier processes; Current density; DH-HEMTs; Light emitting diodes; Neodymium; Poisson equations; Semiconductivity; Semiconductor impurities; Space charge; Thermionic emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
  • Conference_Location
    Tainan
  • Print_ISBN
    978-1-4244-0637-1
  • Electronic_ISBN
    978-1-4244-0637-1
  • Type

    conf

  • DOI
    10.1109/EDSSC.2007.4450222
  • Filename
    4450222
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2983223