Title :
The characteristics of chemical lift off method using metallic buffer layer and its application to the vertical light emitting diodes
Author :
Lee, S.W. ; Jun-Seok Ha ; Lee, Hyung Jong ; Lee, S.H. ; Goto, Tetsu ; Fujii, Kenichi ; Cho, M.W. ; Yao, Tingfeng
Author_Institution :
Center for Interdiscipl. Res., Tohoku Univ., Sendai
Abstract :
The authors report the characteristics of chemical lift-off method using metallic buffer layer and its application to the real light emitting devices.
Keywords :
buffer layers; light emitting diodes; chemical lift off; metallic buffer layer; vertical light emitting diodes; Buffer layers; Chemical processes; Epitaxial growth; Etching; Gallium nitride; Lattices; Leakage current; Light emitting diodes; Substrates; X-ray scattering;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800773
