Electrodeposition of CuInSe2 (CIS) absorber layer onto Au-glass substrates

Electrodeposition is emerging as a method for the synthesis of semiconductor thin films and nanostructures, especially chalcogenides and oxides. In this study, polycrystalline thin films of CuInSe₂(CIS) were deposited by the electrodeposition method on Au coated glass substrate from an aqueous acidic solution containing 2 mM CuCl₂, 7 mM InCl₃ and 4 mM SeO₂ adjusted to pH = 2. The optimal ED-CIS thin film is obtained from the growth solution containing 1 M TEA at the -1.7 V (SCE) after annealing at 230degC for 30 min. Compositing all experiments, we got know that it is no possibility to let CIS thin film grow up completely on a glass substrate, without mixing or annealing.