• DocumentCode
    2983268
  • Title

    Extremely Ultra -Shallow p+-n Boron-Deposited Silicon Diodes Applied to DUV Photodiodes

  • Author

    Sarubbi, F. ; Nanver, L.K. ; Scholtes, T.L.M. ; Nihtianov, S.N.

  • Author_Institution
    DIMES, Delft Univ. of Technol., Delft
  • fYear
    2008
  • fDate
    23-25 June 2008
  • Firstpage
    143
  • Lastpage
    144
  • Abstract
    In this paper, we present an atmospheric-/reduced-pressure CVD technique based on pure boron deposition that, to our knowledge, enables the fabrication of the hitherto most shallow junctions, far less than 10 nm deep, that function with the same ideality and low current levels as conventional deep p+-n diodes.
  • Keywords
    boron; p-n junctions; photodiodes; silicon; DUV photodiodes; atmospheric-/reduced-pressure CVD technique; shallow junctions; ultra shallow p+-n boron deposited silicon diodes; Boron; CMOS technology; Doping; Fabrication; Germanium silicon alloys; Lithography; Photodiodes; Schottky diodes; Silicon germanium; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2008
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1942-5
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2008.4800775
  • Filename
    4800775
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2983268