Title :
Extremely Ultra -Shallow p+-n Boron-Deposited Silicon Diodes Applied to DUV Photodiodes
Author :
Sarubbi, F. ; Nanver, L.K. ; Scholtes, T.L.M. ; Nihtianov, S.N.
Author_Institution :
DIMES, Delft Univ. of Technol., Delft
Abstract :
In this paper, we present an atmospheric-/reduced-pressure CVD technique based on pure boron deposition that, to our knowledge, enables the fabrication of the hitherto most shallow junctions, far less than 10 nm deep, that function with the same ideality and low current levels as conventional deep p+-n diodes.
Keywords :
boron; p-n junctions; photodiodes; silicon; DUV photodiodes; atmospheric-/reduced-pressure CVD technique; shallow junctions; ultra shallow p+-n boron deposited silicon diodes; Boron; CMOS technology; Doping; Fabrication; Germanium silicon alloys; Lithography; Photodiodes; Schottky diodes; Silicon germanium; Temperature;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800775
