Title :
Temperature Effect of a Heterojunction Bipolar Transistor (HBT) with an Emitter-Edge-Thinning Structure
Author :
Chen, T.P. ; Chu, K.Y. ; Chen, L.Y. ; Tsai, T.H. ; Hung, C.W. ; Liu, W.C.
Author_Institution :
Nat. Cheng-Kung Univ., Tainan
Abstract :
The temperature-dependent DC characteristics and noise performance of an interesting InGaP/GaAs heterojunction bipolar transistor (HBT) with emitter-edge-thinning structure are demonstrated. Experimentally, due to the emitter-edge-thinning structure, higher current gains and wider collector current operation regime over the measured temperature range (300 ~ 400 K) are observed as compared to the conventional device. In addition, the studied device exhibits lower base current ideality factors, better thermal stabilities on DC current gains, lower base surface recombination current densities, and improved device reliability. Therefore, the studied device is suitable for low-power and high-temperature electronic applications.
Keywords :
current density; gallium arsenide; heterojunction bipolar transistors; high-temperature electronics; indium compounds; low-power electronics; semiconductor device reliability; thermal stability; HBT; InGaP-GaAs; device reliability; emitter-edge-thinning structure; heterojunction bipolar transistor; low-power high-temperature electronics; surface recombination current density; temperature-dependent DC characteristics; thermal stability; Current density; Current measurement; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Spontaneous emission; Temperature distribution; Temperature measurement; Thermal factors; Thermal stability;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450226
