Top-gated Thin Film FETs Fabricated from Arrays of Self-aligned Semiconducting Carbon Nanotubes

Author

Engel, Michael ; Small, Joshua P. ; Steiner, Mathias ; Lin, Yu-Ming ; Green, Alexander A. ; Hersam, Mark C. ; Avouris, Phaedon

Author_Institution

IBM Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY

fYear

2008

fDate

23-25 June 2008

Firstpage

149

Lastpage

150

Abstract

In this paper, we present a new approach for making active carbon nanotube (CNT) electrical devices and demonstrate the first aligned CNT array field effect transistors (FET) from 99% pure separated semiconducting nanotubes. Through evaporation-driven deposition of predominantly semiconducting nanotubes from the liquid phase, we have fabricated aligned, thin-film CNT devices with high on-state currents. The fabrication scheme presented here provides a versatile production method translatable to other substrates such as flexible plastics.

Keywords

carbon nanotubes; elemental semiconductors; field effect transistors; nanotube devices; semiconductor nanotubes; thin film transistors; C; CNT array FET; CNT electrical devices; evaporation-driven deposition; field effect transistors; on-state currents; self-aligned semiconducting carbon nanotubes; semiconducting nanotubes; thin-film CNT devices; top-gated thin film FET; Carbon nanotubes; FETs; Fabrication; Plastic films; Production; Semiconductivity; Semiconductor nanotubes; Semiconductor thin films; Sputtering; Thin film devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2008

Conference_Location

Santa Barbara, CA

ISSN

1548-3770

Print_ISBN

978-1-4244-1942-5

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2008.4800778

Filename

4800778