DocumentCode :
2983331
Title :
Top-gated Thin Film FETs Fabricated from Arrays of Self-aligned Semiconducting Carbon Nanotubes
Author :
Engel, Michael ; Small, Joshua P. ; Steiner, Mathias ; Lin, Yu-Ming ; Green, Alexander A. ; Hersam, Mark C. ; Avouris, Phaedon
Author_Institution :
IBM Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY
fYear :
2008
fDate :
23-25 June 2008
Firstpage :
149
Lastpage :
150
Abstract :
In this paper, we present a new approach for making active carbon nanotube (CNT) electrical devices and demonstrate the first aligned CNT array field effect transistors (FET) from 99% pure separated semiconducting nanotubes. Through evaporation-driven deposition of predominantly semiconducting nanotubes from the liquid phase, we have fabricated aligned, thin-film CNT devices with high on-state currents. The fabrication scheme presented here provides a versatile production method translatable to other substrates such as flexible plastics.
Keywords :
carbon nanotubes; elemental semiconductors; field effect transistors; nanotube devices; semiconductor nanotubes; thin film transistors; C; CNT array FET; CNT electrical devices; evaporation-driven deposition; field effect transistors; on-state currents; self-aligned semiconducting carbon nanotubes; semiconducting nanotubes; thin-film CNT devices; top-gated thin film FET; Carbon nanotubes; FETs; Fabrication; Plastic films; Production; Semiconductivity; Semiconductor nanotubes; Semiconductor thin films; Sputtering; Thin film devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
ISSN :
1548-3770
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2008.4800778
Filename :
4800778
Link To Document :
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