Reduction of surface recombination current by optimized ledge technology

-We deposited SiO₂ thin films by CO₂ laser-assisted PECVD process from N₂O-SiH₄-Ar gas mixtures, with and without resistive heating. Depositions were carried out using capacitively coupled RF PECVD, while simultaneously under CO₂ laser irradiation. As compared to films grown under a conventional PECVD process, these films exhibited lower surface leakage currents and higher breakdown voltage. Greater improvements occurred when the process used longer wavelengths and higher CO₂ laser power, which revealed a photonic, rather than thermal, function of laser irradiation in the process.