Title :
Reduction of surface recombination current by optimized ledge technology
Author :
Tsai, S. ; Chin, H.C. ; Liu, H.P.
Author_Institution :
Lee-Min Inst. of Technol., Taipei
Abstract :
-We deposited SiO2 thin films by CO2 laser-assisted PECVD process from N2O-SiH4-Ar gas mixtures, with and without resistive heating. Depositions were carried out using capacitively coupled RF PECVD, while simultaneously under CO2 laser irradiation. As compared to films grown under a conventional PECVD process, these films exhibited lower surface leakage currents and higher breakdown voltage. Greater improvements occurred when the process used longer wavelengths and higher CO2 laser power, which revealed a photonic, rather than thermal, function of laser irradiation in the process.
Keywords :
gas lasers; laser materials processing; leakage currents; plasma CVD; silicon compounds; SiO2; capacitively coupled RF PECVD; carbon dioxide-laser-assisted PECVD; photonic function; resistive heating; surface leakage current reduction; thin films; Analytical models; Gallium arsenide; Heterojunction bipolar transistors; Microelectronics; Passivation; Potential energy; Semiconductor device packaging;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0636-4
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450228
