Title :
Study of the Density of States of a-InGaZnO Using Field-Effect Technique
Author :
Chen, C. ; Fung, T.C. ; Abe, K. ; Kumomi, H. ; Kanicki, J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI
Abstract :
This paper studies the density-of-localized gap states (DOS) for RF sputter amorphous InGaZnO (a-IGZO) as determined from temperature dependent study of the a-IGZO thin film transistor (TFT) electrical properties. Measurements were performed on inverted-staggered RF sputter a-IGZO TFTs. The drain current (ID) versus the gate-to-source voltage (VGS) at different temperatures from 30degC up to 90degC were measured. Calculated DOS from the subthreshold regime appears to be low with a characteristic energy of about 110 meV. The DOS is larger and has a steeper slope with a characteristic energy of about 30 meV.
Keywords :
II-VI semiconductors; amorphous semiconductors; electronic density of states; gallium compounds; indium compounds; localised states; semiconductor thin films; thin film transistors; wide band gap semiconductors; InGaZnO; TFT; amorphous thin film transistor; characteristic energy; density-of-localized gap states; drain current; electrical properties; gate-to-source voltage; Amorphous materials; Channel bank filters; Computer science; Current measurement; Dielectrics and electrical insulation; Flat panel displays; Radio frequency; Temperature dependence; Thin film transistors; Voltage;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800779