Title :
Laterally vibrating-body double gate MOSFET with improved signal detection
Author :
Grogg, D. ; Tekin, H.C. ; Badila-Ciressan, N.D. ; Mazza, M. ; Tsamados, D. ; Ionescu, A.M.
Author_Institution :
Lab. of Micro/nano-Electron. Devices, Ecole Polytech. Fed. de Lausanne, Lausanne
Abstract :
Laterally vibrating-body double-gate MOSFET that shows a +30 dB signal increase compared to an identical resonator operating with pure capacitive detection is reported. The double-gate MOSFET is fabricated on SOI substrate with silicon film thickness of 1.25 mum and laterally vibrating MOS transistor structure has two lateral fixed gates separated from the movable transistor body by gaps of 165 nm.
Keywords :
MOSFET; elemental semiconductors; silicon; MOS transistor structure; SOI substrate; Si; Si-Jk; capacitive detection; lateral fixed gates; laterally vibrating-body double gate MOSFET; silicon film thickness; size 1.25 mum; MOSFET circuits; Motion detection; Nanobioscience; Nanoscale devices; Piezoresistance; Q factor; Resonance; Signal detection; Vibrations; Voltage;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800781
