Subthreshold Performance of Double-gate Accumulation-mode P-channel SOI MOSFET

Author

Zhengfan, Zhang ; Li Zhaoji ; Kaizhou, Tan ; Jiabin, Zhang ; Kaicheng, Li

Author_Institution

Univ. of Electron. Sci. & Technol. of China, Chengdu

fYear

2007

fDate

18-21 April 2007

Firstpage

1

Lastpage

4

Abstract

In this paper, an analytical model of subthreshold swing for the double-gate accumulation-mode P-channel SOI MOSFET is described. The model is based on Poisson´s equation and depletion approximation, and the relation of the subthreshold swing with both the gate oxide capacitance and the interface trap density is obtained. The model is verified by experiment and by numerical simulation. Also an approach to extracting the interface trap density with subthreshold swing is proposed.

Keywords

MOSFET; Poisson equation; semiconductor device models; silicon-on-insulator; Poisson equation; Si-SiO₂; depletion approximation; double-gate accumulation-mode P-channel SOI MOSFET; gate oxide capacitance; interface trap density; subthreshold swing; Analytical models; Application specific integrated circuits; Equations; Integrated circuit technology; Isolation technology; MOSFET circuits; Numerical simulation; Parasitic capacitance; Radiation hardening; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2007. ICMMT '07. International Conference on

Conference_Location

Builin

Print_ISBN

1-4244-1049-5

Electronic_ISBN

1-4244-1049-5

Type

conf

DOI

10.1109/ICMMT.2007.381457

Filename

4266216