Title :
Extraction of Correlated Base and Collector Current RF Noise Sources in SiGe HBTs
Author :
Chen, Kun-Ming ; Huang, Guo-Wei ; Chen, Han-Yu ; Hu, Hsin-Hui ; Liao, Wen-Shiang ; Chang, Chun-Yen
Author_Institution :
Nat. Nano Device Lab., Hsinchu
Abstract :
A method for extracting current noise sources in SiGe HBTs is proposed in this work. The base current noise, collector current noise and their correlation are extracted after removing the noise contribution from the extrinsic elements of devices. We simplify the extraction procedure by simple calculations of the four-port Y-parameters of the extrinsic circuit. The proposed procedure prevents the complicated calculation through repeated two-port noise circuit analysis. The four-port Y-parameters are calculated through the use of corresponding operands following their definition. The proposed four-port Y-parameters calculation method is much easy to implement in the mathematic program.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device noise; RF noise sources; SiGe; SiGe HBT; base current noise; collector current noise; four-port Y-parameter; Circuit analysis; Circuit noise; Equivalent circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit interconnections; Mathematics; Radio frequency; Silicon germanium; Voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450238
