Extraction of Correlated Base and Collector Current RF Noise Sources in SiGe HBTs

Author

Chen, Kun-Ming ; Huang, Guo-Wei ; Chen, Han-Yu ; Hu, Hsin-Hui ; Liao, Wen-Shiang ; Chang, Chun-Yen

Author_Institution

Nat. Nano Device Lab., Hsinchu

fYear

2007

fDate

20-22 Dec. 2007

Firstpage

765

Lastpage

768

Abstract

A method for extracting current noise sources in SiGe HBTs is proposed in this work. The base current noise, collector current noise and their correlation are extracted after removing the noise contribution from the extrinsic elements of devices. We simplify the extraction procedure by simple calculations of the four-port Y-parameters of the extrinsic circuit. The proposed procedure prevents the complicated calculation through repeated two-port noise circuit analysis. The four-port Y-parameters are calculated through the use of corresponding operands following their definition. The proposed four-port Y-parameters calculation method is much easy to implement in the mathematic program.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; semiconductor device noise; RF noise sources; SiGe; SiGe HBT; base current noise; collector current noise; four-port Y-parameter; Circuit analysis; Circuit noise; Equivalent circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit interconnections; Mathematics; Radio frequency; Silicon germanium; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Conference_Location

Tainan

Print_ISBN

978-1-4244-0637-1

Electronic_ISBN

978-1-4244-0637-1

Type

conf

DOI

10.1109/EDSSC.2007.4450238

Filename

4450238