Title :
High Speed InP/InGaAs P-n-p Heterojunction Bipolar Transistors
Author :
Lunardi, L.M. ; Chandrasekhar, S. ; Harem, R.A.
Author_Institution :
AT&T Bell Laboratories
Keywords :
Frequency response; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide;
Conference_Titel :
Device Research Conference, 1992. Digest. 50th Annual
Conference_Location :
Cambridge, MA, USA
DOI :
10.1109/DRC.1992.671887
