Title :
A Physics-Based LDMOS Model and A Simple Characterization Method for Self-Heating Effect on Power Device
Author_Institution :
Microsemi Corp., Bend
Abstract :
An advanced physics-based LDMOS model was developed and novel model extraction with self-heating was proposed. The pinch-off phenomenon was modeled by bias-depended resistor, and the self-heating effect was taken into account during the model parameter extraction based on the simple thermal network. Model fits the measurement within 10% up to the drain current of 10 A.
Keywords :
MOSFET; heating; thermal analysis; LDMOS model; bias-depended resistor; characterization method; current 10 A; model parameter extraction; physics; pinch-off phenomenon; power device; self-heating effect; thermal network; Current measurement; Electrical resistance measurement; Integrated circuit modeling; Parameter extraction; Power measurement; Power system modeling; Pulse measurements; Resistors; Thermal resistance; Voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450242
