Title :
One-Dimensional Nanoelectronic Devices - Towards the Quantum Capacitance Limit
Author :
Knoch, J. ; Björk, M.T. ; Riel, H. ; Schmid, H. ; Riess, W.
Author_Institution :
IBM Zurich Res. Lab., Ruschlikon
Abstract :
We present a study on the scaling of conventional as well as tunneling nanowire/tube field-effect transistors towards the quantum capacitance limit. As it turns out conventional FETs exhibit a scaling benefit in this limit in terms of the power delay product. In addition, the appearance of short channel-like effects due to a parasitics charge pile-up can be avoided. Scaling tFETs towards the QCL allows obtaining regular transistor output characteristics and an on-state performance similar to the performance of cFETs.
Keywords :
capacitance; field effect transistors; nanoelectronics; nanotube devices; nanowires; FET; field-effect transistor; nanoelectronic device; nanotube; nanowire; quantum capacitance limit; Conformal mapping; Delay; FETs; Nanoscale devices; Nanotubes; Parasitic capacitance; Quantum capacitance; Quantum cascade lasers; Scalability; Tunneling;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800790
