Title :
Fabrication and study of low temperature polycrystalline silicon TFT technology applied to step doping LIGBT
Author :
Lin, Jyh-Ling ; Chen, Huang-Jen
Author_Institution :
Hua Fan Univ., Taipei
Abstract :
Thin film transistor lateral insulated gate bipolar transistors (TFT-LIGBTs) were fabricated combining the technology of thin film transistor and the power structure used excimer laser anneal in this paper. Excimer laser anneal and substrate heating at 400degC simultaneously for TFT-LIGBT to integrate with the driving circuit of system-on-panel (SOP) and other circuit in the future. The maximum breakdown voltage of step doping TFT-LIGBT after excimer laser annealing is 280 V with Ldrift=35 mum. The ON/OFF current ratio is 1.59times106. It is higher than solid phase crystallization (SPC)-LIGBT 1.74 about 106 times at Vanode=30 V with Ldrift=35 mum and even more than TFT-LDMOS 1.42times105 10 times.
Keywords :
crystals; driver circuits; excimer lasers; insulated gate bipolar transistors; laser beam annealing; silicon; thin film transistors; driving circuit; excimer laser anneal; lateral insulated gate bipolar transistor doping; polycrystalline silicon; power structure; system-on-panel; temperature 400 C; thin film transistor; voltage 280 V; voltage 30 V; Annealing; Circuits; Doping; Insulated gate bipolar transistors; Optical device fabrication; Power lasers; Silicon on insulator technology; Substrates; Temperature; Thin film transistors;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450243
