DocumentCode
2983645
Title
Catalyst-free Growth and FET Application of (InGa) As Nanowires
Author
Noborisaka, J. ; Sato, T. ; Motohisa, J. ; Tomioka, K. ; Hara, S. ; Fukui, T.
Author_Institution
Grad. Sch. of Inf. Sci. & Technol., Hokkaido Univ., Sapporo
fYear
2008
fDate
23-25 June 2008
Firstpage
177
Lastpage
178
Abstract
In this paper, we report the catalyst-free growth of nanowires utilizing selective-area metalorganic vapor-phase epitaxy (SA-MOVPE) and their application to FETs. InAs nanowire FETs with Schottky gate resulted in large gate leakage current. But the leakage current was suppressed by using a MIS gate structure, and good saturation characteristics as FET were obtained.
Keywords
III-V semiconductors; MISFET; MOCVD; Schottky gate field effect transistors; gallium arsenide; indium compounds; leakage currents; nanofabrication; nanowires; semiconductor growth; vapour phase epitaxial growth; InGaAs; MIS gate structure; SA-MOVPE; Schottky gate; catalyst-free growth; leakage current suppression; nanowire FET; saturation characteristics; selective-area metalorganic vapor-phase epitaxy; Crystalline materials; Crystallization; FETs; Indium gallium arsenide; Leakage current; Lithography; Nanowires; Ohmic contacts; Semiconductor materials; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2008
Conference_Location
Santa Barbara, CA
ISSN
1548-3770
Print_ISBN
978-1-4244-1942-5
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2008.4800791
Filename
4800791
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