Scaling properties of (111) InAs Nanowire MOSFETs

Ill-V nanowire MOSFETs are currently under consideration for scaling beyond the 22 nm node. For a 50 nm diameter (111) InAs MOSFETs with a 50 nm long gate, we have shown a maximum transconductance of 0.8 S/mm and a drive current of 0.65 A/mm. We here investigate how the InAs MOSFET drive current behaves when the gate length is scaled down into the sub 10 nm regime. In order to achieve good control of the device electrostatics, the channel thickness (nanowire diameter) needs to be scaled as the gate length of the transistor is scaled. For a cylindrical nanowire gate geometry, simple modeling indicates that the wire diameter should be similar to the gate length. The wire diameter thus also needs to be scaled to the nm regime.