Title :
Coplanar Contact Pattern for single InAs Nanowire FET
Author :
Blekker, K. ; Matiss, A. ; Münstermann, B. ; Regolin, I. ; Li, B. ; Do, Q.T. ; Prost, W. ; Tegude, F.J.
Author_Institution :
Solid State Electron. Dept., Univ. of Duisburg-Essen, Duisburg
Abstract :
We report on the development of coplanar contact pattern for the RF-characterisation of nanoscaled devices. A contact layout exhibiting a low parasitic capacitance is developed using electrostatic field theory calculations. The improved pad- and coupling capacitance has been experimentally verified based on scattering parameter measurements and small signal parameter extraction of a single nanowire transistor.
Keywords :
arsenic compounds; field effect transistors; indium compounds; nanowires; InAs; RF-characterisation; coplanar contact pattern; electrostatic field theory calculations; nanoscaled devices; nanowire transistor; scattering parameter measurements; single nanowire FET; small signal parameter extraction; Calibration; Dielectric substrates; FETs; Frequency; Inductance; Nanoscale devices; Parasitic capacitance; Scattering parameters; Solid state circuits; Transconductance;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800793
