Title :
Measurements of carrier transport in MOSFETs with bottom-up nanowire channel as a function of the nanowire diameter
Author :
Cohen, G.M. ; Bangsaruntip, S. ; Laux, S. ; Rooks, M.J. ; Cai, J. ; Gignac, L.
Author_Institution :
Res. Div., T.J. Watson Res. Center, IBM, Yorktown Heights, NY
Abstract :
In this paper, we establish that bottom-up, vapor-liquid-solid (VLS) grown silicon nanowires can be used to build MOSFETs with characteristics and performance equivalent to contemporary planar FETs. Since VLS nanowires have smoother surfaces and more uniform diameters as compared to top-down fabricated nanowires, we studied the carrier transport in n-FET and p-FET channels made with VLS nanowires having channel diameters down to 3.5 nm.
Keywords :
MOSFET; nanowires; MOSFET; VLS nanowires; bottom-up nanowire channel; carrier transport measurement; nanowire diameter; vapor-liquid-solid; Annealing; CMOS technology; Capacitance measurement; Conductivity; Degradation; FETs; MOSFETs; Nanoscale devices; Oxidation; Silicon devices;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800796
