DocumentCode
2983728
Title
Measurements of carrier transport in MOSFETs with bottom-up nanowire channel as a function of the nanowire diameter
Author
Cohen, G.M. ; Bangsaruntip, S. ; Laux, S. ; Rooks, M.J. ; Cai, J. ; Gignac, L.
Author_Institution
Res. Div., T.J. Watson Res. Center, IBM, Yorktown Heights, NY
fYear
2008
fDate
23-25 June 2008
Firstpage
187
Lastpage
188
Abstract
In this paper, we establish that bottom-up, vapor-liquid-solid (VLS) grown silicon nanowires can be used to build MOSFETs with characteristics and performance equivalent to contemporary planar FETs. Since VLS nanowires have smoother surfaces and more uniform diameters as compared to top-down fabricated nanowires, we studied the carrier transport in n-FET and p-FET channels made with VLS nanowires having channel diameters down to 3.5 nm.
Keywords
MOSFET; nanowires; MOSFET; VLS nanowires; bottom-up nanowire channel; carrier transport measurement; nanowire diameter; vapor-liquid-solid; Annealing; CMOS technology; Capacitance measurement; Conductivity; Degradation; FETs; MOSFETs; Nanoscale devices; Oxidation; Silicon devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2008
Conference_Location
Santa Barbara, CA
ISSN
1548-3770
Print_ISBN
978-1-4244-1942-5
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2008.4800796
Filename
4800796
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