DocumentCode
2983739
Title
Measurement of Residual Stresses in Thin Films using Spiral Microstructures
Author
Li, C.-J. ; Li, C.-T.
Author_Institution
Nat. Kaohsiung First Univ. of Sci. & Technol., Kaohsiung
fYear
2007
fDate
20-22 Dec. 2007
Firstpage
805
Lastpage
808
Abstract
This research uses spiral microstructures to measure both the residual mean normal stress and gradient stress of the thin films for MEMS devices based on analytical solutions. The geometric or dimensional deformations are utilized to determine the residual stresses. ANSYS simulation and experiments are conducted to verify the measurement.
Keywords
crystal microstructure; deformation; internal stresses; micromechanical devices; thin films; ANSYS simulation; MEMS devices; deformations; gradient stress; residual stress measurement; spiral microstructures; thin films; Microelectromechanical devices; Microstructure; Residual stresses; Spirals; Strain measurement; Stress measurement; Structural beams; Substrates; Thin film devices; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location
Tainan
Print_ISBN
978-1-4244-0637-1
Electronic_ISBN
978-1-4244-0637-1
Type
conf
DOI
10.1109/EDSSC.2007.4450248
Filename
4450248
Link To Document