DocumentCode
2983743
Title
KrF laser ablation target analysis and thin film deposition
Author
Spindler, H.L. ; Gilgenbach, Ronald M. ; Sugawara, H. ; Lash, J.S. ; Kovaleski, Scott ; Ang, L.K. ; Lau, Y.Y.
Author_Institution
Dept. of Nucl. Eng. & Radiol. Sci., Michigan Univ., Ann Arbor, MI, USA
fYear
1996
fDate
3-5 June 1996
Firstpage
171
Lastpage
172
Abstract
Summary form only given. Mechanisms of KrF laser (248 nm, 1.2 J, 40 ns) ablation have been investigated by electron microscope analysis of targets and thin-films deposited on silicon substrates. Laser ablated (Al and Fe) targets show the formation of conical microstructures, which increase the laser absorption, but also generate larger particulate (5-15 /spl mu/m) on deposited films. The development of these microstructures has been investigated as a function of the number of incident KrF laser pulses (up to 4000). A diagnostic utilizing dye laser scattering from ablated particulate supports the evidence that KrF laser-damaged targets produce more and larger particulate than smooth targets. The time of flight from laser scattering signals gives velocities of 100 m/s for the smaller particulate and 25 m/s for the largest particulate. The effects of substrate heating on thin film deposition are being investigated. A theory of laser absorption by rough surfaces has been derived.
Keywords
pulsed laser deposition; 1.2 J; 248 nm; 40 ns; Al; Fe; KrF; KrF laser; KrF laser pulses; Si; ablated particulate; conical microstructure; dye laser scattering; electron microscope analysis; laser ablation target analysis; laser absorption; laser scattering signals; laser-damaged targets; microstructures; rough surfaces; smooth targets; substrate heating; thin film deposition; thin-films; time of flight; Absorption; Electron microscopy; Laser ablation; Laser theory; Microstructure; Pulsed laser deposition; Scattering; Semiconductor thin films; Sputtering; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 1996. IEEE Conference Record - Abstracts., 1996 IEEE International Conference on
Conference_Location
Boston, MA, USA
ISSN
0730-9244
Print_ISBN
0-7803-3322-5
Type
conf
DOI
10.1109/PLASMA.1996.550723
Filename
550723
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