DocumentCode :
2983745
Title :
Efficiency increase of silicon-on-insulator Raman lasers by reduction of free-carrier absorption in tapered waveguides
Author :
Krause, Michael ; Renner, Hagen ; Brinkmeyer, Ernst
Author_Institution :
Technische Univ. Hamburg-Harburg, Germany
Volume :
2
fYear :
2005
fDate :
22-27 May 2005
Firstpage :
1548
Abstract :
The efficiency of continuous-wave SOI Raman lasers can he increased significantly by using a waveguide with a longitudinally varying (as opposed to a constant) effective area, thus reducing the impact of free-carrier absorption.
Keywords :
Raman lasers; silicon-on-insulator; waveguide lasers; Si-SiO2; continuous-wave silicon-on-insulator Raman lasers; free-carrier absorption reduction; tapered waveguides; Absorption; Laser excitation; Laser modes; Optical waveguides; Power generation; Power lasers; Pump lasers; Silicon on insulator technology; Stimulated emission; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
Type :
conf
DOI :
10.1109/CLEO.2005.202188
Filename :
1573254
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2983745
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