Title :
AISb--InAs-AlSb P-n-P transistors with low turn-on voltage, narrow bases, and low base resistance
Author :
Pekarik, J.J. ; Kroemer, H. ; English, J.H.
Author_Institution :
University of Califomia, Santa Barbara
Keywords :
Conducting materials; Current density; Electric resistance; Electron mobility; Fabrication; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Low voltage; P-n junctions;
Conference_Titel :
Device Research Conference, 1992. Digest. 50th Annual
Conference_Location :
Cambridge, MA, USA
DOI :
10.1109/DRC.1992.671888
