• DocumentCode
    2983787
  • Title

    AISb--InAs-AlSb P-n-P transistors with low turn-on voltage, narrow bases, and low base resistance

  • Author

    Pekarik, J.J. ; Kroemer, H. ; English, J.H.

  • Author_Institution
    University of Califomia, Santa Barbara
  • fYear
    1992
  • fDate
    21-24 June 1992
  • Keywords
    Conducting materials; Current density; Electric resistance; Electron mobility; Fabrication; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Low voltage; P-n junctions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1992. Digest. 50th Annual
  • Conference_Location
    Cambridge, MA, USA
  • Type

    conf

  • DOI
    10.1109/DRC.1992.671888
  • Filename
    671888
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2983787