Si/SiGe HBTs for Millimeter-wave BiCMOS Technologies

Author

Chevalier, P. ; Geynet, B. ; Vandelle, B. ; Brossard, F. ; Pourchon, F. ; Avenier, G. ; Gloria, D. ; Dutartre, D. ; Lepilliet, S. ; Dambrine, G. ; Zerounian, N. ; Yau, K.H.K. ; Laskin, E. ; Nicolson, S.T. ; Voinigescu, S.P. ; Chantre, A.

Author_Institution

Analog & RF Adv. R & D, STMicroelectronics, Crolles

fYear

2008

fDate

23-25 June 2008

Firstpage

195

Lastpage

198

Abstract

In this paper we review a bit more than 10 years of SiGe BiCMOS technology development and present the best results published to date by the main contenders in the field. Next, with the support of recent results obtained at STMicroelectronics, we discuss the process optimization that led to further increase in the device operating speed. Finally, we present the characteristics of a 260GHz f_T, 340GHz f_max SiGe HBT technology along with recent circuit results demonstrated in this technology.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; semiconductor materials; silicon; HBT technology; Si-SiGe; frequency 260 GHz; frequency 340 GHz; heterojunction bipolar transistors; millimeter-wave BiCMOS technology; process optimization; BiCMOS integrated circuits; CMOS technology; Germanium silicon alloys; Heterojunction bipolar transistors; Millimeter wave technology; Millimeter wave transistors; Radio frequency; Research and development; Silicon germanium; Strontium;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2008

Conference_Location

Santa Barbara, CA

ISSN

1548-3770

Print_ISBN

978-1-4244-1942-5

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2008.4800800

Filename

4800800