N-face GaN/AlGaN Transistors Through Substrate Removal

Author

Chung, J.W. ; Piner, E. ; Palacios, T.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA

fYear

2008

fDate

23-25 June 2008

Firstpage

199

Lastpage

200

Abstract

In this paper, we present a new method to fabricate N-face GaN/AlGaN HEMTs based on the substrate removal of a Ga-face AlGaN/GaN layer grown on Si. A new substrate removal and transfer technology with no degradation to the GaN active layer. This technology has allowed the fabrication of N-face GaN transistors with record sheet resistance values. The Ga-face surface was bonded to a Si carrier wafer by using a hydrogen silsesquioxane (HSQ) interlayer. HSQ is a flowable oxide with excellent thermal stability.

Keywords

III-V semiconductors; aluminium compounds; bonding processes; elemental semiconductors; etching; gallium compounds; high electron mobility transistors; semiconductor growth; silicon; thermal stability; wide band gap semiconductors; Ga-face surface; GaN-AlGaN; N-face HEMT fabrication; Si; hydrogen silsesquioxane interlayer; interlayer bonding; selective etching; substrate removal; thermal stability; transfer technology; Aluminum gallium nitride; Fabrication; Gallium nitride; HEMTs; Hydrogen; MODFETs; Surface resistance; Thermal degradation; Thermal stability; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2008

Conference_Location

Santa Barbara, CA

ISSN

1548-3770

Print_ISBN

978-1-4244-1942-5

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2008.4800801

Filename

4800801