DocumentCode
2983878
Title
Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier
Author
Wong, Man Hoi ; Pei, Yi ; Chu, Rongming ; Rajan, Siddharth ; Swenson, Brian L. ; Brown, David F. ; Keller, Stacia ; DenBaars, Steven P. ; Speck, James S. ; Mishra, Umesh K.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA
fYear
2008
fDate
23-25 June 2008
Firstpage
201
Lastpage
202
Abstract
In summary, an N-face HEMT with good DC and RF properties was demonstrated. The use of AlN for electron confinement eliminates alloy scattering and offers a strong back barrier to mitigate short channel effects for highly scaled submicron devices. N-face devices are therefore expected to deliver excellent power density and efficiency with low leakage at microwave and mm-wave frequencies.
Keywords
III-V semiconductors; aluminium compounds; high electron mobility transistors; molecular beam epitaxial growth; wide band gap semiconductors; AlN; MBE grown; N-face; back barrier; high electron mobility transistors; power performance; Conducting materials; Etching; Gallium nitride; HEMTs; MODFETs; Plasma applications; Plasma confinement; Plasma devices; Plasma temperature; Scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2008
Conference_Location
Santa Barbara, CA
ISSN
1548-3770
Print_ISBN
978-1-4244-1942-5
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2008.4800802
Filename
4800802
Link To Document