DocumentCode
2983902
Title
V-Gate GaN HEMTs with 12.2 W/mm and 65% PAE at X-Band
Author
Chu, Rongming ; Shen, Likun ; Fichtenbaum, Nicholas ; Brown, David ; Chen, Zhen ; Keller, Stacia ; Mishra, Umesh
Author_Institution
ECE Dept., Univ. of California, Santa Barbara, CA
fYear
2008
fDate
23-25 June 2008
Firstpage
205
Lastpage
206
Abstract
In this paper, we present our development of a novel HEMT which uses V-shaped gate geometry to reduce the field crowding at the gate edge, and pushes the high power performance of the deeply recessed HEMTs toward higher operating voltages. The V-gate GaN HEMTs were fabricated by using a highly manufacturable approach, and demonstrated X-band power performance superior to devices made by other technologies.
Keywords
III-V semiconductors; gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN; HEMT; V-shaped gate geometry; Aluminum gallium nitride; Bandwidth; Dispersion; Gallium nitride; Gate leakage; HEMTs; Lithography; MODFETs; Surface charging; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2008
Conference_Location
Santa Barbara, CA
ISSN
1548-3770
Print_ISBN
978-1-4244-1942-5
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2008.4800804
Filename
4800804
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