Title :
Study on the Impact of Operating Point on Transmission Efficiency and Harmonic Suppression of T/R Module Based on Wide Bandgap Semiconductor
Author_Institution :
Key Lab. for Nat. Defence on Antenna & Microwave Technol., Nanjing Res. Inst. of Electron. Technol., Nanjing, China
Abstract :
Focusing on the impact of operating point to transmission efficiency and harmonic suppression of T/R module based on wide bandgap semiconductor, this paper theoretically analyzes the relation between operating point and transmission efficiency and linearity. Experiment of GaN T/R module based on GaN HEMT NPTB0004 shows that with optimal static current of 50mA, transmission PAE is up to 45.5% and suppression of second harmony is better than -21dBc, and suppression of third harmony is better than -15dBc. This can supply engineering value of active phase array radar for SAR application.
Keywords :
III-V semiconductors; gallium compounds; harmonics suppression; high electron mobility transistors; phased array radar; receivers; transmitters; wide band gap semiconductors; HEMT NPTB0004; T/R module; active phase array radar; harmonic suppression; operating point; transmission efficiency; wide bandgap semiconductor; Gallium nitride; HEMTs; Harmonics suppression; Linearity; Microwave technology; Phased arrays; Power amplifiers; Power generation; Thermal conductivity; Wide band gap semiconductors; GaN; Harmonic Suppression; Power Add Efficiency (PAE); T/R Module;
Conference_Titel :
Synthetic Aperture Radar, 2009. APSAR 2009. 2nd Asian-Pacific Conference on
Conference_Location :
Xian, Shanxi
Print_ISBN :
978-1-4244-2731-4
Electronic_ISBN :
978-1-4244-2732-1
DOI :
10.1109/APSAR.2009.5374307
