Title :
A 1.0 V 230 MHz column-access embedded DRAM macro for portable MPEG applications
Author :
Tomishima, S. ; Tsuji, T. ; Kawasaki, T. ; Ishikawa, M. ; Inokuchi, T. ; Kato, H. ; Tanizaki, H. ; Abe, W. ; Shibayama, A. ; Fukushima, Y. ; Niiro, M. ; Maruta, M. ; Uchikoba, T. ; Senoh, M. ; Sakamoto, S. ; Ooishi, T. ; Kikukawa, H. ; Hidaka, H. ; Takaha
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
Previous embedded DRAMs (eDRAMs) have the dual ports on the sense amplifier and wide I/O buses on memory arrays for high data rate in graphic controller chips. This causes decreased cell efficiency and increased power consumption in burst operation compared to commodity DRAM. This eDRAM macro provides the low power consumption and small die needed in portable multi media equipment with MPEG logic, such as video phone, video camera, and personal digital assistant (PDA). To incorporate 0.13 μm logic technology for low power, the power supply is reduced to 1.0 V for logic and 2.5 V for other circuitry. This paper describes realizing fast memory access even at such low voltage.
Keywords :
integrated memory circuits; low-power electronics; multimedia systems; notebook computers; random-access storage; video cameras; videotelephony; 0.13 micron; 1 V; 2.5 V; 230 MHz; LV operation; MPEG logic; PDA; burst operation; column-access embedded DRAM macro; fast memory access; low power consumption; personal digital assistant; portable MPEG applications; portable multi media equipment; video camera; video phone; Delay; Energy consumption; Logic circuits; MOSFETs; Personal digital assistants; Power amplifiers; Power supplies; Pulse amplifiers; Random access memory; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6608-5
DOI :
10.1109/ISSCC.2001.912684
