Optimized model for SOI and cryogenic analog/digital circuits

Author

Lai, J.C. ; Beaudoin, K.P.

Author_Institution

Solid State Electron. Center, Honeywell Inc., Plymouth, MN, USA

Volume

1

fYear

1994

fDate

3-5 Aug 1994

Firstpage

660

Abstract

A cryogenic model based on transverse field and temperature dependence for different scattering mechanisms that influence channel mobility is developed. The kink effect is shown in both SOI (body floating) and bulk (carrier freezeout) at cryogenic temperatures below 30 Kelvin. The negative conductance model based on both a 2-dimensional electric field and temperature effect in SOI body tie transistors is also developed and implemented in SPICE

Keywords

MOSFET; SPICE; carrier mobility; circuit analysis computing; cryogenic electronics; mixed analogue-digital integrated circuits; semiconductor device models; silicon-on-insulator; SOI; SPICE; body floating; body tie transistors; carrier freezeout; channel mobility; cryogenic analog/digital circuits; cryogenic model; kink effect; negative conductance model; scattering mechanisms; temperature dependence; transverse field; two-dimensional electric field; Cryogenics; Dielectrics and electrical insulation; Digital circuits; Impact ionization; MOSFETs; SPICE; Scattering; Silicon on insulator technology; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1994., Proceedings of the 37th Midwest Symposium on

Conference_Location

Lafayette, LA

Print_ISBN

0-7803-2428-5

Type

conf

DOI

10.1109/MWSCAS.1994.519380

Filename

519380