• DocumentCode
    2984090
  • Title

    Spin Precession in Oblique Magnetic Fields

  • Author

    Li, Jing ; Huang, Biqin ; Appelbaum, Ian

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Delaware, Newark, DE
  • fYear
    2008
  • fDate
    23-25 June 2008
  • Firstpage
    221
  • Lastpage
    222
  • Abstract
    The authors have measured spin precession from devices with 350 micron-thick undoped silicon transport layers in an oblique magnetic field synthesized by a static magnetic field Bpar and a varied magnetic field Bperp. Experimental results of spin precession, measured by changing the fixed in-plane magnetic field magnitude at zero device misalignment are also presented. Repeating this study at a fixed device misalignment angle of 30 degrees is also shown as is holding the fixed field constant at different misalignment angles is shown . The authors modeled the device spin detector current using a drift-diffusion model which in linear response is proportional to the projection of final spin direction (after transport) on the measurement axis determined by detector magnetization. Under the influence of an oblique magnetic field, spin is induced to precess around the magnetic field, which produces asymmetric Hanle curves (due to broken symmetry of spin direction or spin precession chirality, or both) that are different from those measured in single-axis magnetic fields. The simulated spin precession measurements are presented and compared favorably to the experimental data . In conclusion, the Hanle spin precession signal is suppressed when a fixed in-plane magnetic field is used in conjunction with a varied magnetic field perpendicular to the plane of the spin-transport device, and the signal becomes asymmetric when the device is misaligned with respect to magnetic fields.
  • Keywords
    Hanle effect; carrier mobility; elemental semiconductors; magnetic field effects; magnetoelectronics; semiconductor devices; silicon; spin polarised transport; Hanle curves; Hanle spin; Si; detector magnetization; device spin detector current; drift-diffusion model; oblique magnetic fields; size 350 micron; spin precession; static magnetic field; undoped silicon transport layers; varied magnetic field; zero device misalignment; Bismuth; Detectors; Electric variables measurement; Electrons; Magnetic circuits; Magnetic field measurement; Magnetic fields; Magnetic modulators; Silicon; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2008
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1942-5
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2008.4800812
  • Filename
    4800812