VTH -Extractors Based Readout Circuit of ISFET with Temperature Compensation

Author

Liu, Tai-Tsun ; Chung, Wen-Yaw ; Cruz, Febus Reidj G ; Tsai, You-Lin ; Pijanowska, Dorota G. ; Torbicz, Wladyslaw ; Grabiec, Piotr B. ; Jaroszewicz, Bohdan

Author_Institution

Chung-Yuan Christian Univ., Chung-Li

fYear

2007

fDate

20-22 Dec. 2007

Firstpage

901

Lastpage

904

Abstract

-This paper proposes a novel readout circuit of ion sensitive field effect transistor (ISFET) with temperature compensation using two threshold voltage (V_TH) extractor circuits. The first V_TH extractor with ISFET gives the pH reading and the second V_TH extractor with depletion-type MOSFET (DMOSFET) provides the temperature compensation. The entire circuit uses only 20 transistors and dissipates a power of 889.3 muW. This design offers a sensitivity of 54 mV/pH and an improved temperature coefficient (T.C.) of 0.02 mV/degC.

Keywords

MOSFET; compensation; ion sensitive field effect transistors; ISFET; depletion-type MOSFET; ion sensitive field effect transistor; readout circuit; temperature compensation; threshold voltage extractor circuits; Biomedical monitoring; Biomembranes; Energy consumption; FET integrated circuits; Industrial electronics; MOSFET circuits; Operational amplifiers; Tellurium; Temperature sensors; Threshold voltage; ISFET; Temperature compensation; VTH extractor;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Conference_Location

Tainan

Print_ISBN

978-1-4244-0637-1

Electronic_ISBN

978-1-4244-0637-1

Type

conf

DOI

10.1109/EDSSC.2007.4450271

Filename

4450271