Magnetoresistance in MOSFETs with ferromagnetic MnAs source and drain contacts: Spin injection and transport in Si MOS channels

Summary form only given. Recently-proposed spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs) are expected to be key devices for advancing the integrated circuit technology beyond the CMOS scaling. Towards the integration of spin MOSFETs with a CMOS platform, experimental demonstration and critical understanding of output characteristics are strongly needed. In this paper, we present the magnetoresistance and spin transport in MOSFETs with ferromagnetic MnAs source/drain (S/D) contacts.