DocumentCode :
2984239
Title :
A 0.8 dB NF ESD-protected 9 mW CMOS LNA
Author :
Leroux, P. ; Janssens, J. ; Steyaert, M.
Author_Institution :
Katholieke Univ., Leuven, Belgium
fYear :
2001
fDate :
7-7 Feb. 2001
Firstpage :
410
Lastpage :
411
Abstract :
The GPS L2 band, centered at 1.2276 GHz, is planned to enhance the capabilities of civil GPS to backup the conventional GPS L1 link. As the L2 receiver is required to detect a low power signal, an LNA with extremely low noise figure is required. In addition, the LNA must exhibit a large gain to suppress noise from the subsequent stages. This ESD-protected CMOS LNA meets these requirements.
Keywords :
CMOS analogue integrated circuits; Global Positioning System; UHF amplifiers; UHF integrated circuits; electrostatic discharge; protection; 0.8 dB; 1.2276 GHz; 9 mW; CMOS LNA; ESD protection; GPS; L2 receiver; noise figure; Bonding; Capacitance; Diodes; Electrostatic discharge; Global Positioning System; Impedance; Inductors; Noise figure; Noise measurement; Protection;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International
Conference_Location :
San Francisco, CA, USA
ISSN :
0193-6530
Print_ISBN :
0-7803-6608-5
Type :
conf
DOI :
10.1109/ISSCC.2001.912696
Filename :
912696
Link To Document :
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