DocumentCode :
2984260
Title :
High Frequency ZnO Thin Film Transistors
Author :
Bayraktaroglu, Burhan ; Leedy, Kevin ; Neidhard, Robert
Author_Institution :
Air Force Res. Lab., AFRL/RYD, Wright-Patterson AFB, OH, USA
fYear :
2008
fDate :
23-25 June 2008
Firstpage :
237
Lastpage :
238
Abstract :
Thin film transistors (TFT) are the essential elements of flat panel display electronics. The current technology for this application based on amorphous or polycrystalline Si films has speed limitations due to low mobility of such films. As the demand for higher speed electronics increase with display size and complexity, alternative technologies are being developed based on heavy metal oxide compounds such as ZnO. The increased mobility offered by this technology together with its robustness to environmental conditions, make it a suitable candidate for future applications.
Keywords :
flat panel displays; thin film transistors; zinc compounds; ZnO; environmental conditions; flat panel display electronics; polycrystalline films; thin film transistors; Frequency; Thin film transistors; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
ISSN :
1548-3770
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2008.4800819
Filename :
4800819
Link To Document :
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