Title :
Design of NDR-Based Multiple-Valued Multiplexer Using Standard SiGe Process
Author :
Gan, Kwang-Jow ; Lin, Yi-Jhih ; Chen, Yaw-Hwang ; Tsai, Cher-Shiung ; Chang, Pei-Hua
Author_Institution :
Kun Shan Univ., Yung Kang
Abstract :
The design of a eight-valued multiplexer using the negative differential resistance (NDR) circuit is demonstrated. The NDR circuit is made of one Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and two SiGe-based heterojunction bipolar transistors (HBT). During suitably arranging the MOS parameters, we can obtain the NDR characteristic in its combined current-voltage curve. First we design an eight-valued decoder using this MOS-HBT-NDR circuit, after that we demonstrate its application to an eight-valued multiplexer. The design and simulation of this NDR-based multiplexer is based on the standard 0.35 mum SiGe BiCMOS process.
Keywords :
CMOS integrated circuits; Ge-Si alloys; MOSFET; heterojunction bipolar transistors; multiplexing equipment; network synthesis; semiconductor materials; silicon compounds; BiCMOS process; HBT; MOS-HBT-NDR circuit; NDR circuit; NDR-based multiple-valued multiplexer; Si-based metal-oxide-semiconductor field-effect-transistor; SiGe; SiGe-based heterojunction bipolar transistors; negative differential resistance; size 0.35 mum; standard SiGe process; BiCMOS integrated circuits; Circuit simulation; Decoding; Germanium silicon alloys; Heterojunction bipolar transistors; MOCVD; Molecular beam epitaxial growth; Multiplexing; Resonant tunneling devices; Silicon germanium;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450277
