Electron Injection Mechanism in Top-gate Amorphous Silicon Thin-film Transistors with Self-Aligned Silicide Source and Drain

Author

Huang, Yifei ; Hekmatshoar, Bahman ; Wagner, Sigurd ; Sturm, James C.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., Princeton, NJ

fYear

2008

fDate

23-25 June 2008

Firstpage

241

Lastpage

242

Abstract

We have successfully demonstrated top-gate a-Si TFT with self-aligned nickel silicide source/drsain (S/D). We have shown, by examining contact resistance, the dominant electron injection mechanism is tunneling from silicide S/D to the channel. Further, we show that the contact resistance has no influence on device threshold and little effect on effective mobility down to L=5 mum.

Keywords

Schottky barriers; amorphous semiconductors; charge injection; contact resistance; elemental semiconductors; extrapolation; nickel compounds; semiconductor device models; semiconductor-metal boundaries; silicon; thin film transistors; tunnelling; Schottky barrier height; Schottky barrier thickness; Si-NiSi; channel length; channel resistance; contact resistance; electron injection mechanism; electron tunneling; extrapolatiion; gated four-terminal device; self-aligned silicide drain; self-aligned silicide source; silicide contact; thin film transistor resistance; top-gate amorphous silicon thin-film transistors; Amorphous silicon; Contact resistance; Electrodes; Electrons; Nickel; Schottky barriers; Silicidation; Silicides; Substrates; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2008

Conference_Location

Santa Barbara, CA

ISSN

1548-3770

Print_ISBN

978-1-4244-1942-5

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2008.4800821

Filename

4800821