Title :
Electron Injection Mechanism in Top-gate Amorphous Silicon Thin-film Transistors with Self-Aligned Silicide Source and Drain
Author :
Huang, Yifei ; Hekmatshoar, Bahman ; Wagner, Sigurd ; Sturm, James C.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., Princeton, NJ
Abstract :
We have successfully demonstrated top-gate a-Si TFT with self-aligned nickel silicide source/drsain (S/D). We have shown, by examining contact resistance, the dominant electron injection mechanism is tunneling from silicide S/D to the channel. Further, we show that the contact resistance has no influence on device threshold and little effect on effective mobility down to L=5 mum.
Keywords :
Schottky barriers; amorphous semiconductors; charge injection; contact resistance; elemental semiconductors; extrapolation; nickel compounds; semiconductor device models; semiconductor-metal boundaries; silicon; thin film transistors; tunnelling; Schottky barrier height; Schottky barrier thickness; Si-NiSi; channel length; channel resistance; contact resistance; electron injection mechanism; electron tunneling; extrapolatiion; gated four-terminal device; self-aligned silicide drain; self-aligned silicide source; silicide contact; thin film transistor resistance; top-gate amorphous silicon thin-film transistors; Amorphous silicon; Contact resistance; Electrodes; Electrons; Nickel; Schottky barriers; Silicidation; Silicides; Substrates; Thin film transistors;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800821
