3 V GSM base station RF receivers using 0.25 /spl mu/m BiCMOS

Author

Jenshan Lin ; Boric-Lubecke, O. ; Gould, P. ; Zelley, C. ; Yung-Jinn Chen ; Ran-Hong Yan

Author_Institution

Lucent Technols., Bell Labs., Murray Hill, NJ, USA

fYear

2001

fDate

7-7 Feb. 2001

Firstpage

416

Lastpage

417

Abstract

The design of receiver front-end for cellular base stations is more challenging than for handsets due to the simultaneous requirement of sensitivity and linearity. These base-station RFIC receivers are for both GSM900 and DCS1800 systems. The receiver chips achieve low noise figure and high IP3 simultaneously without any gain control. The chips are fabricated using a 0.25 /spl mu/m BiCMOS process with inductor Q of approximately 10. With 3 V supply, current consumption is 132 mA for the GSM900 receiver and 117 mA for the DCS1800 receiver. This is the first silicon-integrated radio front end for base stations reported to date.

Keywords

BiCMOS integrated circuits; cellular radio; radio receivers; 0.25 micron; 117 mA; 132 mA; 3 V; BiCMOS RFIC; DCS1800; GSM base station; GSM900; IP3; RF receiver; cellular base station; inductor Q-factor; noise figure; radio front-end; silicon integrated circuit; Base stations; BiCMOS integrated circuits; GSM; Gain control; Linearity; Noise figure; Radio frequency; Radiofrequency integrated circuits; Receivers; Telephone sets;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-6608-5

Type

conf

DOI

10.1109/ISSCC.2001.912700

Filename

912700