Title :
3 V GSM base station RF receivers using 0.25 /spl mu/m BiCMOS
Author :
Jenshan Lin ; Boric-Lubecke, O. ; Gould, P. ; Zelley, C. ; Yung-Jinn Chen ; Ran-Hong Yan
Author_Institution :
Lucent Technols., Bell Labs., Murray Hill, NJ, USA
Abstract :
The design of receiver front-end for cellular base stations is more challenging than for handsets due to the simultaneous requirement of sensitivity and linearity. These base-station RFIC receivers are for both GSM900 and DCS1800 systems. The receiver chips achieve low noise figure and high IP3 simultaneously without any gain control. The chips are fabricated using a 0.25 /spl mu/m BiCMOS process with inductor Q of approximately 10. With 3 V supply, current consumption is 132 mA for the GSM900 receiver and 117 mA for the DCS1800 receiver. This is the first silicon-integrated radio front end for base stations reported to date.
Keywords :
BiCMOS integrated circuits; cellular radio; radio receivers; 0.25 micron; 117 mA; 132 mA; 3 V; BiCMOS RFIC; DCS1800; GSM base station; GSM900; IP3; RF receiver; cellular base station; inductor Q-factor; noise figure; radio front-end; silicon integrated circuit; Base stations; BiCMOS integrated circuits; GSM; Gain control; Linearity; Noise figure; Radio frequency; Radiofrequency integrated circuits; Receivers; Telephone sets;
Conference_Titel :
Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6608-5
DOI :
10.1109/ISSCC.2001.912700
