Electrical Detection of Biological Conjugation by AlGaN/GaN Heterostructure Field Effect Transistors

Author

Wen, Xuejin ; Wang, Shengnian ; Gupta, Samit K. ; Shapiro, John ; Brillson, Leonard J. ; Lee, Stephen C. ; Lee, James L. ; Lu, Wu

Author_Institution

Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH

fYear

2008

fDate

23-25 June 2008

Firstpage

253

Lastpage

254

Abstract

The article presents the electrical detection of streptavidin and monokin induced by interferon gamma proteins and hybridization process of single strand DNA by AlGaN/GaN HFETs. For protein conjugation detection, AlGaN gate surface was functionalized by oxidation, 3-aminopropyltriethoxysilane treatment, and biotinylation using NHS-sulfo-biotin. For streptavidin (STA) detection, at different ionic strengths, the effect of Debye length on detection sensitivity has been demonstrated. For DNA hybridization detection, 12-mer prime ssDNA with matched and mismatched sequences were used as probe and target molecules.

Keywords

DNA; III-V semiconductors; aluminium compounds; bioelectric phenomena; biological techniques; gallium compounds; high electron mobility transistors; molecular biophysics; proteins; wide band gap semiconductors; 3-aminopropyltriethoxysilane treatment; AlGaN-GaN; Debye length; HFET; biological conjugation; biotinylation; heterostructure field effect transistors; interferon gamma proteins; ionic strengths; monokin detection; oxidation; protein conjugation detection; single strand DNA hybridization; streptavidin detection; Aluminum gallium nitride; DNA; Gallium nitride; Gamma ray detection; Gamma ray detectors; HEMTs; MODFETs; Oxidation; Proteins; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2008

Conference_Location

Santa Barbara, CA

ISSN

1548-3770

Print_ISBN

978-1-4244-1942-5

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2008.4800826

Filename

4800826