• DocumentCode
    2984537
  • Title

    Resonant Tunneling Diodes with Very High Peak Current Density Using Thin Barrier and High Emitter Doping

  • Author

    Teranishi, A. ; Suzuki, S. ; Sugiyama, H. ; Yokoyama, H. ; Asada, Minoru

  • Author_Institution
    Tokyo Inst. of Technol., Tokyo
  • fYear
    2008
  • fDate
    23-25 June 2008
  • Firstpage
    265
  • Lastpage
    266
  • Abstract
    We obtained InGaAs/AlAs double-barrier resonant tunneling diodes (DB RTDs) with very high peak current density using thin barrier and high emitter doping. The peak current density of 13 mA/mum2 with the peak/valley current ratio of 1.5 was obtained for 1.4-nm-thick barrier and emitter doping concentration of 6 times 1018cm-3. By these characteristics, oscillators with the fundamental oscillation exceeding 1 THz are sufficiently possible.
  • Keywords
    III-V semiconductors; aluminium compounds; current density; doping profiles; gallium arsenide; indium compounds; resonant tunnelling diodes; semiconductor doping; InGaAs-AlAs; barrier thickness; doping concentration; double-barrier resonant tunneling diodes; peak current density; peak/valley current ratio; size 1.4 nm; Current density; Diodes; Doping; Electron emission; Indium gallium arsenide; Neodymium; Oscillators; Photonics; Resonant tunneling devices; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2008
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1942-5
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2008.4800832
  • Filename
    4800832
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2984537