Title :
Static and dynamic measurements of the Henry factor of 5-quantum dot layer single mode lasers emitting at 1.3 μm on GaAs
Author :
Martinez, A. ; Provost, J.G. ; Lemaitre, A. ; Gautier-Lafaye, O. ; Dagens, B. ; Merghem, K. ; Ferlazzo, L. ; Dupuis, C. ; Le Gouezigou, O. ; Ramdane, A.
Author_Institution :
CNRS, Marcoussis, France
Abstract :
The "material" and "device" linewidth enhancement factor of 5 quantum-dot layer single mode lasers emitting at 1.3 μm are investigated using two methods for the first time, demonstrating a record value of 0.67 for this wavelength.
Keywords :
III-V semiconductors; gallium arsenide; laser modes; quantum dot lasers; spectral line breadth; 1.3 mum; 5-quantum dot layer lasers; GaAs; Henry factor; device linewidth enhancement factor; dynamic measurements; material linewidth enhancement factor; single mode lasers; static measurements; Frequency modulation; Gallium arsenide; Laser modes; Lasers and electrooptics; Molecular beam epitaxial growth; Optical materials; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
DOI :
10.1109/CLEO.2005.202232
