Title :
Simulating Pseudomorphic HEMTs: Optimizing Performance to Achieve Multi-terahertz Operating Frequencies
Author :
Akis, R. ; Ayubi-Moak, J.S. ; Faralli, N. ; Goodnick, S.M. ; Ferry, D.K. ; Saraniti, M.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ
Abstract :
In summary, we show that properly scaled HEMT devices can operate will into the THz regime, and provide a viable device option in this spectral region. These results are also important for logic devices desired for operation in the Tbs regime, as the cutoff frequency fT is intimately related to the logic delay time in a switching transistor.
Keywords :
delay systems; high electron mobility transistors; logic devices; logic delay time; logic devices; multi terahertz; operating frequencies; pseudomorphic HEMT; switching transistor; Cutoff frequency; Electron devices; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Logic devices; MODFETs; Monte Carlo methods; PHEMTs;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800833
