• DocumentCode
    2984575
  • Title

    CMOS 0.18um Dual-Wideband Low-Noise Amplifier for Ultra-Wideband Wireless Receiver

  • Author

    Huang, Zhe-Yang ; Huang, Che-Cheng

  • fYear
    2007
  • fDate
    20-22 Dec. 2007
  • Firstpage
    989
  • Lastpage
    992
  • Abstract
    In this paper a CMOS dual-wideband low-noise amplifier (LNA) is designed for ultra- wideband (UWB) wireless receiver radio system. The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaked load, a notch filter and an output buffer for measurement purpose. It is simulated in TSMC 0.18 um standard RF CMOS process. The LNA gives 13.66 dB maximum power gain between 3.0 GHz- 4.9 GHz and 10.34 dB maximum power gain between 6.0 GHz-10.3 GHz while consuming 24.07 mW through a 1.8 V supply. Over the 3.1 GHz-4.9 GHz frequency band and the 6.0 GHz-10.3 GHz, a minimum noise figure is 2.6 dB and 3.8 dB. Input return loss lower than -8.3 ldB in all bandwidth have been achieved.
  • Keywords
    CMOS integrated circuits; impedance matching; low noise amplifiers; notch filters; radio receivers; ultra wideband communication; CMOS dual-wideband low-noise amplifier; frequency 3 GHz to 4.9 GHz; frequency 6 GHz to 10.3 GHz; gain 10.34 dB; gain 13.66 dB; notch filter; power 24.07 mW; shunt-peaked load; size 0.18 mum; ultra-wideband wireless receiver radio system; voltage 1.8 V; wideband input impedance matching network; Broadband amplifiers; Gain; Impedance matching; Impedance measurement; Low-noise amplifiers; Matched filters; Radio frequency; Radiofrequency amplifiers; Receivers; Ultra wideband technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
  • Conference_Location
    Tainan
  • Print_ISBN
    978-1-4244-0637-1
  • Electronic_ISBN
    978-1-4244-0637-1
  • Type

    conf

  • DOI
    10.1109/EDSSC.2007.4450293
  • Filename
    4450293