DocumentCode :
2984593
Title :
Room-Temperature Operation of MOCVD-Grown GaInAs/InP Strahed-Layer Multiquantum Well Lasers in the 1.8/spl mu/m Range
Author :
Forouhar, S. ; Larsson, A. ; Ksendzov, A. ; Lang, R.J.
Author_Institution :
Jet Propulsion Laboratory/California Institute of Technology
fYear :
1992
fDate :
21-24 June 1992
Keywords :
Gas lasers; Indium gallium arsenide; Indium phosphide; Laser modes; Optical pulses; Quantum well lasers; Space technology; Substrates; Threshold current; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1992. Digest. 50th Annual
Conference_Location :
Cambridge, MA, USA
Type :
conf
DOI :
10.1109/DRC.1992.671892
Filename :
671892
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2984593
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