DocumentCode
2984594
Title
Localised recombination and gain in quantum dots
Author
Pask, H.J. ; Summers, H.D. ; Blood, P.
Author_Institution
Sch. of Phys. & Astron., Cardiff Univ., UK
Volume
3
fYear
2005
fDate
22-27 May 2005
Firstpage
1665
Abstract
We have computed light-current (L-I) characteristics of a system of 106 dots with localised recombination processes. The L-I curves cannot be analysed assuming the processes have simple power law dependences on electron number.
Keywords
laser theory; quantum dot lasers; light-current characteristics; localised recombination; optical gain; power law; quantum dots; Charge carrier processes; Electron optics; Power measurement; Power system modeling; Quantum computing; Quantum dot lasers; Quantum dots; Radiative recombination; Spontaneous emission; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN
1-55752-795-4
Type
conf
DOI
10.1109/CLEO.2005.202234
Filename
1573300
Link To Document