• DocumentCode
    2984605
  • Title

    Heterogeneous Integration of Molecules in Nonvolatile Memory

  • Author

    Hou, Tuo-Hung ; Raza, Hassan ; Afshari, Kamran ; Ruebusch, Daniel J. ; Kan, Edwin C.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY
  • fYear
    2008
  • fDate
    23-25 June 2008
  • Firstpage
    275
  • Lastpage
    276
  • Abstract
    In this paper, we present a much simpler implementation of the double tunnel junction by utilizing the monodisperse nature of these nanoscale entities. C60 molecules instead of Si NCs are embedded inside the oxide barrier to overcome the limitation on the NC size control. We will further show improved tR I tPE ratio in a metal NC memory integrated with this barrier.
  • Keywords
    fullerenes; random-access storage; silicon compounds; tunnelling; C60; SiO2; charge-based nonvolatile memory; double tunnel junction; field-asymmetric tunneling processes; heterogeneous integration; molecules; tunneling barrier; Annealing; Charge carrier processes; Electrons; Energy states; Gold; Interface states; Nonvolatile memory; Resonant tunneling devices; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2008
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1942-5
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2008.4800836
  • Filename
    4800836
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2984605