Title :
Heterogeneous Integration of Molecules in Nonvolatile Memory
Author :
Hou, Tuo-Hung ; Raza, Hassan ; Afshari, Kamran ; Ruebusch, Daniel J. ; Kan, Edwin C.
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY
Abstract :
In this paper, we present a much simpler implementation of the double tunnel junction by utilizing the monodisperse nature of these nanoscale entities. C60 molecules instead of Si NCs are embedded inside the oxide barrier to overcome the limitation on the NC size control. We will further show improved tR I tPE ratio in a metal NC memory integrated with this barrier.
Keywords :
fullerenes; random-access storage; silicon compounds; tunnelling; C60; SiO2; charge-based nonvolatile memory; double tunnel junction; field-asymmetric tunneling processes; heterogeneous integration; molecules; tunneling barrier; Annealing; Charge carrier processes; Electrons; Energy states; Gold; Interface states; Nonvolatile memory; Resonant tunneling devices; Silicon; Voltage;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800836
