• DocumentCode
    2984623
  • Title

    Read Disturb in NROM Charge Trapping Non-Volatile Memory Device

  • Author

    Shainsky, Natalie ; Bloom, Ilan ; Shacham, Yosi ; Eitan, Boaz

  • Author_Institution
    Electr. Eng., Tel Aviv Univ., Ramat Aviv
  • fYear
    2008
  • fDate
    23-25 June 2008
  • Firstpage
    277
  • Lastpage
    278
  • Abstract
    We investigated threshold voltage (VT) shifts during read operation of NROM devices in advanced non-volatile memory (NVM) process generations (75nm). For the first time it is demonstrated that channel-initiated secondary electron injection (CHISEL) mechanism is the main source of the "read disturb" experimental results in advanced process devices. This mechanism is generic to non-volatile memories (NVM) devices and must be minimized to avoid data corruption during read.
  • Keywords
    random-access storage; NROM charge trapping nonvolatile memory device; advanced process devices; channel-initiated secondary electron injection mechanism; data corruption; nonvolatile memory process generations; read operation; size 75 nm; threshold voltage shifts; Acceleration; Channel hot electron injection; Charge carrier processes; Electron traps; Low voltage; Nonvolatile memory; Radiative recombination; Spontaneous emission; Threshold voltage; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2008
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1942-5
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2008.4800837
  • Filename
    4800837
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2984623