Title :
Ultrafast gain recovery dynamics of the excited state in InGaAs quantum dot amplifiers
Author :
Schneider, S. ; Woggon, U. ; Borri, P. ; Langbein, W. ; Ouyang, D. ; Sellin, R.L. ; Bimberg, D.
Author_Institution :
Dortmund Univ., Germany
Abstract :
The gain dynamics in electrically-pumped InGaAs quantum dot amplifiers at 300 K is measured to be in the subpicosecond range for both ground and excited state transitions, promising for all-optical signal processing at >40 GHz repetition rates.
Keywords :
III-V semiconductors; electron beam pumping; excited states; gallium arsenide; ground states; high-speed optical techniques; indium compounds; quantum dot lasers; 300 K; InGaAs; InGaAs amplifiers; all-optical signal processing; electrically-pumped amplifiers; excited state; excited state transition; ground state transition; quantum dot amplifiers; ultrafast gain recovery dynamics; Gain measurement; High speed optical techniques; Indium gallium arsenide; Optical mixing; Optical pumping; Quantum dot lasers; Quantum dots; Semiconductor optical amplifiers; US Department of Transportation; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
DOI :
10.1109/CLEO.2005.202237
